jiangsu changjiang ele c tron ics technology co., ltd t o -92 plastic-encapsulate transistors 2SA719/2s a720 transist or (pnp) fea tures for l ow-f requency p ower a mplification and driver amplification maximum ratings (t a =25 unless other w ise noted) symbol para mete r value unit v cbo coll ector-bas e voltage 2SA719 2sa720 -30 -60 v v ce o collector-emitter v o ltage 2SA719 2sa720 -25 -50 v v eb o emitter-base v o ltage -5 v i c coll ector curr ent -continuous -500 ma p c coll ector po wer dissipation 625 mw t j junctio n temperature 150 t st g s t orage temperature -55-150 electrical chara cteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max u nit co llecto r-base breakdown voltage 2SA719 2sa720 v (b r)cb o i c = -10ua, i e =0 -30 -60 v co llecto r-emitter breakdown voltage 2SA719 2sa720 v (b r)ce o i c = -10ma ,i b =0 -25 -50 v emitter-b a se breakdown voltage v ( br )ebo i e = -10ua, i c =0 -5 v co llecto r cut-off current i cb o v cb = -20v ,i e =0 -0.1 ua emitter cut-off current i ebo v eb = -4 v ,i c =0 -0.1 ua h fe(1) v ce = - 10v, i c = -150ma 85 340 dc cu rr ent gain h fe(2) v ce = - 10v, i c = -500ma 40 co llecto r-emitter saturation voltage v ce (sa t) i c = - 300ma, i b = -30ma -0.6 v bas e -emitter saturation voltage v be( sat) i c = -300ma, i b =-30ma -1.5 v t r ansition frequency f t v ce = -10v , i c = -50ma f = 200mhz 200 mhz co llecto r output capacitance cob v cb = - 10v,i e =0 , f=1mh z 15 pf classific a tion h fe(1) rank q r s range 85-1 70 120-240 170-340 t o -92 1. em itter 2. collector 3. base www.cj-elec.com 1 ', ' h f,2015
-0 .1 -1 -10 1 10 100 - 10 -100 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 -0 -3 -6 -9 -1 2 -15 -0 -50 -100 -150 -200 -250 -1 0 -100 10 100 1000 -1 -1 0 -100 -0.1 -1 -1 -1 0 -100 -10 -100 -1000 -0 .0 -0.3 -0.6 -0.9 -1.2 -0.1 -1 -10 -100 -2 0 f=1m hz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ? ? c ob c ib capacit ance c (pf) reverse vo ltage v r (v) -5 00 -500 -5 com mon emitter v ce =- 10v t a =25 tra nsition frequency f t (mhz ) collector current i c (m a) -3 p c ? ? t a co llector power dissipation p c (mw) am bient temperature t a ( ) -0.3m a -0.4m a -0 .5ma -0.6m a -0.8m a -1.0m a -0.9m a -0 .7ma c ommon emitter t a =25 -0.2m a i b =- 0.1ma s tatic characteristic collector current i c (ma) collector-em itter voltage v ce (v) com mon emitter v ce = - 10v i c t a =25 t a =100 dc current gain h fe collector current i c (m a) -5 00 i c f t ? ? h fe ? ? =10 i c v b esat ? ? t a =100 t a =25 base- emitter saturation voltage v bes at (v) collector current i c (m a) -2 -0 .3 =10 t a =100 t a =25 i c v c esat ? ? collector-emitter saturation vo ltage v ce sat (mv) collector current i c (m a) com mon emitter v ce =- 10v v be i c ? ? t a = 1 0 0 t a = 2 5 collector current i c (ma) base- emmiter voltage v be (v) - 500 www.cj-elec.com 2 ', ' h f,2015 t ypical characteristics
min m ax min max a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 3 d,dec,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 4 d,dec,2015
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